Your browser doesn't support javascript.
loading
Tailoring Magnetoelectric Coupling in BiFeO3 /La0.7 Sr0.3 MnO3 Heterostructure through the Interface Engineering.
Yi, Di; Yu, Pu; Chen, Yi-Chun; Lee, Hsin-Hua; He, Qing; Chu, Ying-Hao; Ramesh, Ramamoorthy.
Affiliation
  • Yi D; Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA.
  • Yu P; State Key Laboratory for Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China.
  • Chen YC; Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan.
  • Lee HH; Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan.
  • He Q; Department of Physics, Durham University, Durham, DH1 3LE, UK.
  • Chu YH; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan.
  • Ramesh R; Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA.
Adv Mater ; 31(11): e1806335, 2019 Mar.
Article de En | MEDLINE | ID: mdl-30663174
ABSTRACT
Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO3 (BFO) and La0.7 Sr0.3 MnO3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices.
Mots clés

Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Adv Mater Sujet du journal: BIOFISICA / QUIMICA Année: 2019 Type de document: Article Pays d'affiliation: États-Unis d'Amérique

Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Adv Mater Sujet du journal: BIOFISICA / QUIMICA Année: 2019 Type de document: Article Pays d'affiliation: États-Unis d'Amérique