Upside-down InAs/InAs1-xSbx type-II superlattice-based nBn mid-infrared photodetectors with an AlGaAsSb quaternary alloy barrier.
Opt Express
; 28(9): 13616-13624, 2020 Apr 27.
Article
de En
| MEDLINE
| ID: mdl-32403832
ABSTRACT
Ga-free InAs/InAsSb type-II superlattices (T2SLs) are emerging as candidate materials for high temperature operation of mid-infrared photodetectors, which are critical for infrared technology with an aim to provide low-cost and compact detection systems. In this work, by utilizing upside-down device structure, a closely lattice-matched Al0.83Ga0.17AsSb quaternary alloy as electron barrier was pre-grown before the growth of InAs/InAsSb T2SLs absorber in a nBn device. Based on this design, we have demonstrated 5-µm cut-off mid-wavelength infrared (MWIR) photodetectors that exhibited a dark current density of 1.55 × 10-4 A/cm2 at an operation bias 400mV at 150K. A saturated quantum efficiency at â¼4.0 µm reaches 37.5% with a 2 µm absorber and the peak responsivity reaches 1.2 A/W, which yields a peak specific detectivity as high as â¼1.82 × 1011 cm·H z1/2/W at a forward bias of 400mV.
Texte intégral:
1
Collection:
01-internacional
Base de données:
MEDLINE
Langue:
En
Journal:
Opt Express
Sujet du journal:
OFTALMOLOGIA
Année:
2020
Type de document:
Article