Emulating synaptic response in n- and p-channel MoS<sub>2</sub> transistors by utilizing charge trapping dynamics.

Bhattacharjee, Shubhadeep; Wigchering, Rient; Manning, Hugh G; Boland, John J; Hurley, Paul K

Emulating synaptic response in n- and p-channel MoS₂ transistors by utilizing charge trapping dynamics.

Bhattacharjee, Shubhadeep; Wigchering, Rient; Manning, Hugh G; Boland, John J; Hurley, Paul K.

Affiliation

Bhattacharjee S; Tyndall National Institute, and the School of Chemistry, University College Cork, Cork, Ireland. s.bhattacharjee@tyndall.ie.
Wigchering R; Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK. s.bhattacharjee@tyndall.ie.
Manning HG; Tyndall National Institute, and the School of Chemistry, University College Cork, Cork, Ireland.
Boland JJ; Advanced Materials and Bioengineering Research (AMBER) Centre and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland.
Hurley PK; Advanced Materials and Bioengineering Research (AMBER) Centre and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland.

Sci Rep ; 10(1): 12178, 2020 07 22.

Article de En | MEDLINE | ID: mdl-32699332

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Sujet principal: Rhénium / Transistors électroniques / Disulfures / Molybdène / Niobium Langue: En Journal: Sci Rep Année: 2020 Type de document: Article Pays d'affiliation: Irlande Pays de publication: Royaume-Uni

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