Effects of UV Irradiation and Storage on the Performance of Inverted Red Quantum-Dot Light-Emitting Diodes.

Luo, Yu; Wang, Junjie; Wang, Pu; Mai, Chaohuang; Wang, Jian; Yap, Boon Kar; Peng, Junbiao

Luo, Yu; Wang, Junjie; Wang, Pu; Mai, Chaohuang; Wang, Jian; Yap, Boon Kar; Peng, Junbiao.

Affiliation

Luo Y; State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Wang J; State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Wang P; School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541000, China.
Mai C; State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Wang J; State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Yap BK; The International School of Advanced Materials, School of Material Science and Engineering, South China University of Technology, Guangzhou 510640, China.
Peng J; Electronic and Communications Department, Institute of Sustainable Energy, College of Engineering, University Tenaga Nasional, Kajang 43000, Malaysia.

Nanomaterials (Basel) ; 11(6)2021 Jun 18.

Article de En | MEDLINE | ID: mdl-34207371

Mots clés

UV irradiation; inverted QLEDs; quantum-dot; storage

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Nanomaterials (Basel) Année: 2021 Type de document: Article Pays d'affiliation: Chine

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