A review on III-V compound semiconductor short wave infrared avalanche photodiodes.

Liang, Yan; Perumalveeramalai, Chandrasekar; Lin, Guochen; Su, Xiangbin; Zhang, Xiaoming; Feng, Shuai; Xu, Yingqiang; Li, Chuanbo

Liang, Yan; Perumalveeramalai, Chandrasekar; Lin, Guochen; Su, Xiangbin; Zhang, Xiaoming; Feng, Shuai; Xu, Yingqiang; Li, Chuanbo.

Affiliation

Liang Y; Minzu University of China, school of sciences, Beijing, 100081, CHINA.
Perumalveeramalai C; Minzu University of China, School of science, Beijing, 100081, CHINA.
Lin G; Minzu University of China, School of Science, Beijing, 100081, CHINA.
Su X; Chinese Academy of Sciences, Institute of Semiconductors, Beijing, 100083, CHINA.
Zhang X; Minzu University of China, School of Science, Beijing, 100081, CHINA.
Feng S; Minzu University of China, School of Science, Beijing, 100081, CHINA.
Xu Y; Chinese Academy of Sciences - Institute of Semiconductors, Institute of semiconductors, Beijing, 100083, CHINA.
Li C; Minzu University of China, School of Science, Beijing, 100081, CHINA.

Nanotechnology ; 2022 Feb 10.

Article de En | MEDLINE | ID: mdl-35144248

Mots clés

Avalanche photodiodes; III-V compound semiconductor; Short wave infrared; digital alloys; low noise characteristics

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Nanotechnology Année: 2022 Type de document: Article Pays d'affiliation: Chine Pays de publication: Royaume-Uni

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