The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides.

Lan, Linfeng; Ding, Chunchun; He, Penghui; Su, Huimin; Huang, Bo; Xu, Jintao; Zhang, Shuguang; Peng, Junbiao

Lan, Linfeng; Ding, Chunchun; He, Penghui; Su, Huimin; Huang, Bo; Xu, Jintao; Zhang, Shuguang; Peng, Junbiao.

Affiliation

Lan L; State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Ding C; State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
He P; School of Physics and Electronics, Hunan University, Changsha 410082, China.
Su H; State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Huang B; State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Xu J; State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Zhang S; State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Peng J; State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.

Nanomaterials (Basel) ; 12(21)2022 Nov 04.

Article de En | MEDLINE | ID: mdl-36364678

Mots clés

oxide semiconductors; praseodymium; stability; terbium; tetravalent; thin-film transistors

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Nanomaterials (Basel) Année: 2022 Type de document: Article Pays d'affiliation: Chine

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