Buried graphene heterostructures for electrostatic doping of low-dimensional materials.

Gumprich, A; Liedtke, J; Beck, S; Chirca, I; Potocnik, T; Alexander-Webber, J A; Hofmann, S; Tappertzhofen, S

Gumprich, A; Liedtke, J; Beck, S; Chirca, I; Potocnik, T; Alexander-Webber, J A; Hofmann, S; Tappertzhofen, S.

Affiliation

Gumprich A; Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Martin-Schmeisser-Weg 4-6, D-44227, Dortmund, Germany.
Liedtke J; Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Martin-Schmeisser-Weg 4-6, D-44227, Dortmund, Germany.
Beck S; Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Martin-Schmeisser-Weg 4-6, D-44227, Dortmund, Germany.
Chirca I; Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom.
Potocnik T; Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom.
Alexander-Webber JA; Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom.
Hofmann S; Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom.
Tappertzhofen S; Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Martin-Schmeisser-Weg 4-6, D-44227, Dortmund, Germany.

Nanotechnology ; 34(26)2023 Apr 13.

Article de En | MEDLINE | ID: mdl-36758234

Mots clés

buried triple gates; carbon nanotube transistors; electrostatic doping; graphene-heterostructures; low-dimensional materials; steep slope transistors

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Nanotechnology Année: 2023 Type de document: Article Pays d'affiliation: Allemagne Pays de publication: Royaume-Uni

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