A steep-switching impact ionization-based threshold switching field-effect transistor.

Kang, Chanwoo; Choi, Haeju; Son, Hyeonje; Kang, Taeho; Lee, Sang-Min; Lee, Sungjoo

Kang, Chanwoo; Choi, Haeju; Son, Hyeonje; Kang, Taeho; Lee, Sang-Min; Lee, Sungjoo.

Affiliation

Kang C; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 16419, Korea. leesj@skku.edu.
Choi H; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 16419, Korea. leesj@skku.edu.
Son H; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 16419, Korea. leesj@skku.edu.
Kang T; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 16419, Korea. leesj@skku.edu.
Lee SM; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 16419, Korea. leesj@skku.edu.
Lee S; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 16419, Korea. leesj@skku.edu.

Nanoscale ; 15(12): 5771-5777, 2023 Mar 23.

Article de En | MEDLINE | ID: mdl-36857633

Texte intégral

Ajouter à My VHL

Imprimer

XML

PubMed Links

Recherche sur Google

Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Nanoscale Année: 2023 Type de document: Article Pays de publication: Royaume-Uni

Texte intégral

Ajouter à My VHL

Imprimer

XML

PubMed Links

Recherche sur Google