GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors.

Zou, Can; Zhao, Zixuan; Xu, Mingjun; Wang, Xingfu; Liu, Qing; Chen, Kai; He, Longfei; Gao, Fangliang; Li, Shuti

Zou, Can; Zhao, Zixuan; Xu, Mingjun; Wang, Xingfu; Liu, Qing; Chen, Kai; He, Longfei; Gao, Fangliang; Li, Shuti.

Affiliation

Zou C; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, People's Republic of China.
Zhao Z; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, People's Republic of China.
Xu M; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, People's Republic of China.
Wang X; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, People's Republic of China.
Liu Q; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, People's Republic of China.
Chen K; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, People's Republic of China.
He L; Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, People's Republic of China.
Gao F; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, People's Republic of China.
Li S; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, People's Republic of China.

ACS Nano ; 17(9): 8262-8270, 2023 May 09.

Article de En | MEDLINE | ID: mdl-37125852

Mots clés

Si; gallium nitride; graphene; hot electron transistor; mixed-dimension; tunneling

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: ACS Nano Année: 2023 Type de document: Article