In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers.

Tsai, Po-Cheng; Huang, Chun-Wei; Chang, Shoou-Jinn; Chang, Shu-Wei; Lin, Shih-Yen

Tsai, Po-Cheng; Huang, Chun-Wei; Chang, Shoou-Jinn; Chang, Shu-Wei; Lin, Shih-Yen.

Affiliation

Tsai PC; Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei, 11529, Taiwan.
Huang CW; Institute of Microelectronics, National Cheng Kung University, No.1, University Road, Tainan City, 701, Taiwan.
Chang SJ; Institute of Microelectronics, National Cheng Kung University, No.1, University Road, Tainan City, 701, Taiwan.
Chang SW; Department of Electrical Engineering, National Cheng Kung University, No.1, University Road, Tainan City, 701, Taiwan.
Lin SY; Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei, 11529, Taiwan. swchang@sinica.edu.tw.

Sci Rep ; 13(1): 9197, 2023 Jun 06.

Article de En | MEDLINE | ID: mdl-37280332

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Sci Rep Année: 2023 Type de document: Article Pays d'affiliation: Taïwan Pays de publication: Royaume-Uni

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