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Kagome surface states and weak electronic correlation in vanadium-kagome metals.
Ding, Jianyang; Zhao, Ningning; Tao, Zicheng; Huang, Zhe; Jiang, Zhicheng; Yang, Yichen; Cho, Soohyun; Liu, Zhengtai; Liu, Jishan; Guo, Yanfeng; Liu, Kai; Liu, Zhonghao; Shen, Dawei.
Affiliation
  • Ding J; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
  • Zhao N; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Tao Z; Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing 100872, People's Republic of China.
  • Huang Z; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
  • Jiang Z; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
  • Yang Y; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
  • Cho S; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
  • Liu Z; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Liu J; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
  • Guo Y; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
  • Liu K; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
  • Liu Z; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
  • Shen D; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
J Phys Condens Matter ; 35(40)2023 Jul 07.
Article de En | MEDLINE | ID: mdl-37379852
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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: J Phys Condens Matter Sujet du journal: BIOFISICA Année: 2023 Type de document: Article Pays de publication: Royaume-Uni
Texte intégral
Ajouter à My VHL
Imprimer
XML
PubMed Links
Recherche sur Google

Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: J Phys Condens Matter Sujet du journal: BIOFISICA Année: 2023 Type de document: Article Pays de publication: Royaume-Uni