On-chip Y-junction with adaptive power splitting toward ultrabroad bandwidth.
Opt Lett
; 48(16): 4368-4371, 2023 Aug 15.
Article
de En
| MEDLINE
| ID: mdl-37582034
Growing research interests have been directed to the emerging optical communication band at 2-µm wavelengths. The silicon photonic components are highly desired to operate over a broad bandwidth covering both C-band and the emerging 2-µm wave band. However, the dispersions of the silicon waveguides eventually limit the optical bandwidth of the silicon photonic devices. Here, we introduce a topology-optimized Y-junction with a shallow-etched trench and its utility to reverse the detrimental dispersion effect. The shallow trench enables the Y-junction to have an adaptive splitting capability over a broad spectral range. The 0.2-dB bandwidth of the power splitter exceeds 800â
nm from 1400â
nm to 2200â
nm. The device has a compact footprint of 3 µm × 1.64â
µm. The device is characterized at the C-band and 2-µm band with a measured excess loss below 0.4â
dB for a proof-of-concept demonstration.
Texte intégral:
1
Collection:
01-internacional
Base de données:
MEDLINE
Langue:
En
Journal:
Opt Lett
Année:
2023
Type de document:
Article
Pays de publication:
États-Unis d'Amérique