Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices.

Oh, Il-Kwon; Khan, Asir Intisar; Qin, Shengjun; Lee, Yujin; Wong, H-S Philip; Pop, Eric; Bent, Stacey F

Oh, Il-Kwon; Khan, Asir Intisar; Qin, Shengjun; Lee, Yujin; Wong, H-S Philip; Pop, Eric; Bent, Stacey F.

Affiliation

Oh IK; Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
Khan AI; Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea.
Qin S; Department of Intelligence Semiconductor Engineering, Ajou University, Suwon 16499, South Korea.
Lee Y; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
Wong HP; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
Pop E; Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
Bent SF; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.

ACS Appl Mater Interfaces ; 15(36): 43087-43093, 2023 Sep 13.

Article de En | MEDLINE | ID: mdl-37656599

Mots clés

area-selective atomic layer deposition; data storage device; dielectrics; filament confinement; resistive random-access memory

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Type d'étude: Clinical_trials Langue: En Journal: ACS Appl Mater Interfaces Sujet du journal: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Année: 2023 Type de document: Article Pays d'affiliation: États-Unis d'Amérique

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