Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser.

Wang, Y H; Su, J H; Wang, T W; Lei, Z Y; Chen, Z J; Shangguan, S P; Han, J W; Ma, Y Q

Wang, Y H; Su, J H; Wang, T W; Lei, Z Y; Chen, Z J; Shangguan, S P; Han, J W; Ma, Y Q.

Affiliation

Wang YH; National Space Science Center, CAS, Beijing, China.
Su JH; Beijing University of Posts and Telecommunications, Beijing, China.
Wang TW; National Space Science Center, CAS, Beijing, China.
Lei ZY; College of Physics and Electronic Science, Hunan University, Changsha, China.
Chen ZJ; College of Physics and Electronic Science, Hunan University, Changsha, China.
Shangguan SP; National Space Science Center, CAS, Beijing, China.
Han JW; National Space Science Center, CAS, Beijing, China.
Ma YQ; National Space Science Center, CAS, Beijing, China. ph_fantasy@163.com.

Sci Rep ; 13(1): 14487, 2023 Sep 02.

Article de En | MEDLINE | ID: mdl-37660183

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Sci Rep Année: 2023 Type de document: Article Pays d'affiliation: Chine