Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices.

Rafin, S M Sajjad Hossain; Ahmed, Roni; Haque, Md Asadul; Hossain, Md Kamal; Haque, Md Asikul; Mohammed, Osama A

Rafin, S M Sajjad Hossain; Ahmed, Roni; Haque, Md Asadul; Hossain, Md Kamal; Haque, Md Asikul; Mohammed, Osama A.

Affiliation

Rafin SMSH; Energy Systems Research Laboratory, Department of ECE, Florida International University, Miami, FL 33174, USA.
Ahmed R; Department of ECE, Presidency University, Dhaka 1212, Bangladesh.
Haque MA; Department of EEE, Northern University Bangladesh, Dhaka 1230, Bangladesh.
Hossain MK; Department of EEE, Northern University Bangladesh, Dhaka 1230, Bangladesh.
Haque MA; Department of EEE, Northern University Bangladesh, Dhaka 1230, Bangladesh.
Mohammed OA; Energy Systems Research Laboratory, Department of ECE, Florida International University, Miami, FL 33174, USA.

Micromachines (Basel) ; 14(11)2023 Oct 31.

Article de En | MEDLINE | ID: mdl-38004900

Mots clés

GaN; diamond; power semiconductor devices; silicon; silicon carbide; ultrawide bandgap devices; wide bandgap devices

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Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Micromachines (Basel) Année: 2023 Type de document: Article Pays d'affiliation: États-Unis d'Amérique Pays de publication: Suisse

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