Hole-Injection-Barrier Effect on the Degradation of Blue Quantum-Dot Light-Emitting Diodes.
ACS Nano
; 2024 Feb 08.
Article
de En
| MEDLINE
| ID: mdl-38329720
ABSTRACT
Inefficient hole injection presents a major challenge in achieving stable and commercially viable solution-processed blue electroluminescent devices. Here, we conduct an in-depth study on quantum-dot light-emitting diodes (QLEDs) to understand how the energy levels of common electrodes and hole-transporting layers (HTL) affect device degradation. Our experimental findings reveal a design rule that may seem nonintuitive combining an electrode and HTL with matched energy levels is most effective in preventing voltage rise and irreversible luminance decay, even though it causes a significant energy offset between the HTL and emissive quantum dots. Using an iterative electrostatic model, we discover that the positive outcomes, including a T95 lifetime of 109 h (luminance = 1000 nits, CIE-y = 0.087), are due to the enhanced p-type doping in the HTL rather than the assumed reduction in barrier heights. Furthermore, our modified hole injection dynamics theory, which considers distributed density-of-states, shows that the increased HTL/quantum-dot energy offset is not a primary concern because the effective barrier height is significantly lower than conventionally assumed. Following this design rule, we expect device stability to be enhanced considerably.
Texte intégral:
1
Collection:
01-internacional
Base de données:
MEDLINE
Type d'étude:
Prognostic_studies
Langue:
En
Journal:
ACS Nano
Année:
2024
Type de document:
Article
Pays d'affiliation:
Chine
Pays de publication:
États-Unis d'Amérique