Double Nitrogenation Layer Formed Using Nitric Oxide for Enhancing Li+ Storage Performance, Cycling Stability, and Safety of Si Electrodes.
Adv Sci (Weinh)
; 11(25): e2310062, 2024 Jul.
Article
de En
| MEDLINE
| ID: mdl-38654688
ABSTRACT
To enhance Li storage properties, nitrogenation methods are developed for Si anodes. First, melamine, urea, and nitric oxide (NO) precursors are used to nitrogenize carbon-coated Si particles. The properties of the obtained particles are compared. It is found that the NO process can maximize the graphitic nitrogen (N) content and electronic conductivity of a sample. In addition, optimized N functional groups and OâC species on the electrode surface increase electrolyte wettability. However, with a carbon barrier layer, NO hardly nitrogenizes the Si cores. Therefore, bare Si particles are reacted with NO. Core-shell Si@amorphous SiNx particles are produced using a facile and scalable NO treatment route. The effects of the NO reaction time on the physicochemical properties and charge-discharge performance of the obtained materials are systematically examined. Finally, the Si@SiNx particles are coated with N-doped carbon. Superior capacities of 2435 and 1280 mAh g-1 are achieved at 0.2 and 5 A g-1, respectively. After 300 cycles, 90% of the initial capacity is retained. In addition, differential scanning calorimetry data indicate that the multiple nitrogenation layers formed by NO significantly suppress electrode exothermic reactions during thermal runaway.
Texte intégral:
1
Collection:
01-internacional
Base de données:
MEDLINE
Langue:
En
Journal:
Adv Sci (Weinh)
Année:
2024
Type de document:
Article
Pays d'affiliation:
Taïwan
Pays de publication:
Allemagne