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In Situ Growth Method for Large-Area Flexible Perovskite Nanocrystal Films.
Zhou, Xingting; Xu, Bin; Zhao, Xue; Lv, Hongyu; Qiao, Dongyang; Peng, Xing; Shi, Feng; Chen, Menglu; Hao, Qun.
Affiliation
  • Zhou X; School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China.
  • Xu B; School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China.
  • Zhao X; School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China.
  • Lv H; School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China.
  • Qiao D; Laboratory of Science and Technology on Integrated Logistics Support, National University of Defense Technology, Changsha 410073, China.
  • Peng X; College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China.
  • Shi F; Laboratory of Science and Technology on Integrated Logistics Support, National University of Defense Technology, Changsha 410073, China.
  • Chen M; College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China.
  • Hao Q; Laboratory of Science and Technology on Integrated Logistics Support, National University of Defense Technology, Changsha 410073, China.
Materials (Basel) ; 17(14)2024 Jul 18.
Article de En | MEDLINE | ID: mdl-39063842
ABSTRACT
Metal halide perovskites have shown unique advantages compared with traditional optoelectronic materials. Currently, perovskite films are commonly produced by either multi-step spin coating or vapor deposition techniques. However, both methods face challenges regarding large-scale production. Herein, we propose a straightforward in situ growth method for the fabrication of CsPbBr3 nanocrystal films. The films cover an area over 5.5 cm × 5.5 cm, with precise thickness control of a few microns and decent uniformity. Moreover, we demonstrate that the incorporation of magnesium ions into the perovskite enhances crystallization and effectively passivates surface defects, thereby further enhancing luminous efficiency. By integrating this approach with a silicon photodiode detector, we observe an increase in responsivity from 1.68 × 10-2 A/W to 3.72 × 10-2 A/W at a 365 nm ultraviolet wavelength.
Mots clés

Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Materials (Basel) Année: 2024 Type de document: Article Pays d'affiliation: Chine Pays de publication: Suisse

Texte intégral: 1 Collection: 01-internacional Base de données: MEDLINE Langue: En Journal: Materials (Basel) Année: 2024 Type de document: Article Pays d'affiliation: Chine Pays de publication: Suisse