Electronic structures and carrier distributions of T-shaped AlxGa1-xAs/AlyGa1-yAs quantum wires fabricated by a cleaved-edge overgrowth method. | J Nanosci Nanotechnol;12(7): 5687-90, 2012 Jul. | MEDLINE

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Electronic structures and carrier distributions of T-shaped AlxGa1-xAs/AlyGa1-yAs quantum wires fabricated by a cleaved-edge overgrowth method.

Kim, D H; You, J H; Kim, J H; Yoo, K H; Kim, T W.

Affiliation

Kim DH; Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea.

J Nanosci Nanotechnol ; 12(7): 5687-90, 2012 Jul.

Article in En | MEDLINE | ID: mdl-22966634

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Collection: 01-internacional Database: MEDLINE Language: En Journal: J Nanosci Nanotechnol Year: 2012 Document type: Article Country of publication:

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Collection: 01-internacional Database: MEDLINE Language: En Journal: J Nanosci Nanotechnol Year: 2012 Document type: Article Country of publication: