Electron holography on HfO<sub>2</sub>/HfO<sub>2-x</sub> bilayer structures with multilevel resistive switching properties. | Nanotechnology;28(21): 215702, 2017 May 26. | MEDLINE

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Electron holography on HfO₂/HfO_2-x bilayer structures with multilevel resistive switching properties.

Niu, G; Schubert, M A; Sharath, S U; Zaumseil, P; Vogel, S; Wenger, C; Hildebrandt, E; Bhupathi, S; Perez, E; Alff, L; Lehmann, M; Schroeder, T; Niermann, T.

Affiliation

Niu G; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China. IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany.

Nanotechnology ; 28(21): 215702, 2017 May 26.

Article in En | MEDLINE | ID: mdl-28462907

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2017 Document type: Article Affiliation country: Country of publication:

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2017 Document type: Article Affiliation country: Country of publication: