Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates.
Materials (Basel)
; 8(12): 8169-8182, 2015 Dec 02.
Article
in En
| MEDLINE
| ID: mdl-28793705
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01-internacional
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MEDLINE
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En
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Materials (Basel)
Year:
2015
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Article
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