High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE.
Sci Rep
; 8(1): 3166, 2018 02 16.
Article
in En
| MEDLINE
| ID: mdl-29453376
ABSTRACT
In this study, a novel nanoporous template was obtained by a two-step etching process from MOCVD-GaN/Al2O3 (MGA) with electrochemical etching sequentially followed by chemical wet etching. The twice-etched MOCVD-GaN/Al2O3 (TEMGA) templates were utilized to grow GaN crystals by hydride vapor phase epitaxy (HVPE) method. The GaN crystals were separated spontaneously from the TEMGA template with the assistance of voids formed by the etched nanopores. Several techniques were utilized to characterize the quality of the free-standing GaN crystals obtained from the TEMGA template. Results showed that the quality of the as-obtained GaN crystals was improved obviously compared with those grown on the MGA. This convenient technique can be applied to grow high-quality free-standing GaN crystals.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Sci Rep
Year:
2018
Document type:
Article