Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method. | Appl Opt;57(34): F1-F7, 2018 Dec 01. | MEDLINE

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Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method.

Shen, Chen; Tan, Xin; Jiao, Qingbin; Zhang, Wei; Wang, Tongtong; Li, Wenhao; Wu, Na; Qi, Xiangdong; Bayan, H.

Appl Opt ; 57(34): F1-F7, 2018 Dec 01.

Article in En | MEDLINE | ID: mdl-30645274

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Appl Opt Year: 2018 Document type: Article Country of publication:

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Appl Opt Year: 2018 Document type: Article Country of publication: