Short channel monolayer MoS<sub>2</sub> field-effect transistors defined by SiO <sub>x</sub> nanofins down to 20 nm.

Bi, Kaixi; Liu, Huaizhi; Chen, Yiqin; Luo, Fang; Shu, Zhiwen; Lin, Jun; Liu, Song; Liu, Huawei; Zeng, Zanyang; Dai, Peng; Zhu, Mengjian; Duan, Huigao

Short channel monolayer MoS₂ field-effect transistors defined by SiO _x nanofins down to 20 nm.

Bi, Kaixi; Liu, Huaizhi; Chen, Yiqin; Luo, Fang; Shu, Zhiwen; Lin, Jun; Liu, Song; Liu, Huawei; Zeng, Zanyang; Dai, Peng; Zhu, Mengjian; Duan, Huigao.

Affiliation

Bi K; School of Physics and Electronics, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha 410082, People's Republic of China.

Nanotechnology ; 30(29): 295301, 2019 Jul 19.

Article in En | MEDLINE | ID: mdl-30917350

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2019 Document type: Article Country of publication:

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2019 Document type: Article Country of publication: