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Threshold Voltage Variations Induced by Si1-xGex and Si1-xCx of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors.
Jeong, Jinsu; Yoon, Jun-Sik; Lee, Seunghwan; Baek, Rock-Hyun.
Affiliation
  • Jeong J; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
  • Yoon JS; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
  • Lee S; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
  • Baek RH; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
J Nanosci Nanotechnol ; 20(8): 4684-4689, 2020 Aug 01.
Article in En | MEDLINE | ID: mdl-32126641
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Nanosci Nanotechnol Year: 2020 Document type: Article Country of publication:
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: J Nanosci Nanotechnol Year: 2020 Document type: Article Country of publication: