Your browser doesn't support javascript.
loading
High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate.
Huang, Yu-Chun; Chiu, Hsien-Chin; Kao, Hsuan-Ling; Wang, Hsiang-Chun; Liu, Chia-Hao; Huang, Chong-Rong; Chen, Si-Wen.
Affiliation
  • Huang YC; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
  • Chiu HC; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
  • Kao HL; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
  • Wang HC; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
  • Liu CH; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
  • Huang CR; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
  • Chen SW; Department of Electronics Engineering, Chang Gung University, Taoyuan 33324, Taiwan.
Micromachines (Basel) ; 12(5)2021 May 01.
Article in En | MEDLINE | ID: mdl-34062908
Key words
Fulltext
Add to My VHL
Print
XML
PubMed Links
Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Micromachines (Basel) Year: 2021 Document type: Article Affiliation country: Country of publication:
Fulltext
Add to My VHL
Print
XML
PubMed Links
Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Micromachines (Basel) Year: 2021 Document type: Article Affiliation country: Country of publication: