Effect of Process Temperature on Density and Electrical Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition.

Kim, Hak-Gyeong; Hong, Da-Hee; Yoo, Jae-Hoon; Lee, Hee-Chul

Effect of Process Temperature on Density and Electrical Characteristics of Hf_0.5Zr_0.5O₂ Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition.

Kim, Hak-Gyeong; Hong, Da-Hee; Yoo, Jae-Hoon; Lee, Hee-Chul.

Affiliation

Kim HG; Department of Advanced Materials Engineering, Korea Polytechnic University, Siheung 15073, Korea.
Hong DH; Department of Advanced Materials Engineering, Korea Polytechnic University, Siheung 15073, Korea.
Yoo JH; Department of Advanced Materials Engineering, Korea Polytechnic University, Siheung 15073, Korea.
Lee HC; Department of Advanced Materials Engineering, Korea Polytechnic University, Siheung 15073, Korea.

Nanomaterials (Basel) ; 12(3)2022 Feb 05.

Article in En | MEDLINE | ID: mdl-35159892

Key words

HZO; PEALD; deposition temperature; fatigue endurance; ferroelectric memory; film density; remanent polarization

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2022 Document type: Article Country of publication:

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2022 Document type: Article Country of publication: