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Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS2 Self-Powered Photodetector.
Zhao, Yue; Cho, Jiung; Choi, Miri; Ó Coileáin, Cormac; Arora, Sunil; Hung, Kuan-Ming; Chang, Ching-Ray; Abid, Mohamed; Wu, Han-Chun.
Affiliation
  • Zhao Y; School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China.
  • Cho J; Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea.
  • Choi M; Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea.
  • Ó Coileáin C; Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany.
  • Arora S; Centre for Nanoscience and Nanotechnology, Panjab University, Chandigarh 160014, India.
  • Hung KM; Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC.
  • Chang CR; Quantum information center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC.
  • Abid M; Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC.
  • Wu HC; School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China.
ACS Nano ; 16(10): 17347-17355, 2022 Oct 25.
Article in En | MEDLINE | ID: mdl-36153977
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2022 Document type: Article Country of publication:
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2022 Document type: Article Country of publication: