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Sensitivity of Inner Spacer Thickness Variations for Sub-3-nm Node Silicon Nanosheet Field-Effect Transistors.
Lee, Sanguk; Jeong, Jinsu; Yoon, Jun-Sik; Lee, Seunghwan; Lee, Junjong; Lim, Jaewan; Baek, Rock-Hyun.
Affiliation
  • Lee S; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.
  • Jeong J; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.
  • Yoon JS; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.
  • Lee S; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.
  • Lee J; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.
  • Lim J; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.
  • Baek RH; Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.
Nanomaterials (Basel) ; 12(19)2022 Sep 26.
Article in En | MEDLINE | ID: mdl-36234478
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Diagnostic_studies Language: En Journal: Nanomaterials (Basel) Year: 2022 Document type: Article Country of publication:
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Diagnostic_studies Language: En Journal: Nanomaterials (Basel) Year: 2022 Document type: Article Country of publication: