Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.
Nanomaterials (Basel)
; 13(5)2023 Feb 27.
Article
in En
| MEDLINE
| ID: mdl-36903774
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nanomaterials (Basel)
Year:
2023
Document type:
Article
Country of publication: