Low-Power and Field-Free Perpendicular Magnetic Memory Driven by Topological Insulators.
Adv Mater
; 35(31): e2302350, 2023 Aug.
Article
in En
| MEDLINE
| ID: mdl-37141542
ABSTRACT
Giant spin-orbit torque (SOT) from topological insulators (TIs) has great potential for low-power SOT-driven magnetic random-access memory (SOT-MRAM). In this work, a functional 3-terminal SOT-MRAM device is demonstrated by integrating the TI [(BiSb)2 Te3 ] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. An ultralow switching current density of 1.5 × 105 A cm-2 is achieved in the TI-pMTJ device at room temperature, which is 1-2 orders of magnitude lower than that in conventional heavy-metals-based systems, due to the high SOT efficiency θSH = 1.16 of (BiSb)2 Te3 . Furthermore, all-electrical field-free writing is realized by the synergistic effect of a small spin-transfer torque current during the SOT. The thermal stability factor (Δ = 66) shows the high retention time (>10 years) of the TI-pMTJ device. This work sheds light to the future low-power, high-density, and high-endurance/retention magnetic memory technology based on quantum materials.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Adv Mater
Journal subject:
BIOFISICA
/
QUIMICA
Year:
2023
Document type:
Article
Affiliation country: