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Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis.
Hsieh, Hao-Yu; Liou, Ping-Wei; Yang, Shaobo; Chen, Wei-Cheng; Liang, Li-Ping; Lee, Yueh-Chi; Yang, Chih-Chung C C.
Affiliation
  • Hsieh HY; Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan.
  • Liou PW; Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan.
  • Yang S; Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan.
  • Chen WC; Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan.
  • Liang LP; Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan.
  • Lee YC; Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan.
  • Yang CCC; Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan.
Nanomaterials (Basel) ; 13(10)2023 May 11.
Article in En | MEDLINE | ID: mdl-37242033
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2023 Document type: Article Affiliation country: Country of publication:
Fulltext
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2023 Document type: Article Affiliation country: Country of publication: