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Hydrogen-adsorption induced atomic rearrangement of a Pb monolayer on Si(111).
Phys Rev Lett ; 94(4): 045505, 2005 Feb 04.
Artigo em Inglês | MEDLINE | ID: mdl-15783571
ABSTRACT
We have observed interesting H-atom adsorption induced atomic rearrangements of a Pb monolayer on the Si(111) with a scanning tunneling microscope. A hexagonal ringlike pattern is formed around the point defect. The interactions among nearby H-adsorbed defects can even produce interferencelike superstructures. Phase boundaries are found to either enhance or suppress the formation of the interference pattern. These phenomena are produced by an intricate interplay between electronic and atomic interactions as perturbed by the adsorbed hydrogen atoms.

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Coleções: Bases de dados internacionais Base de dados: MEDLINE Idioma: Inglês Revista: Phys Rev Lett Ano de publicação: 2005 Tipo de documento: Artigo País de afiliação: China