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Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates.
Opt Express ; 21(24): 30065-73, 2013 Dec 02.
Artigo em Inglês | MEDLINE | ID: mdl-24514556
ABSTRACT
This paper demonstrates that quantum-confined Stark effect (QCSE) within the multiple quantum wells (MQWs) can be suppressed by the growths of InGaN-based light-emitting diodes (LEDs) on the nano-sized patterned c-plane sapphire substrates (PCSSs) with reducing the space. The efficiency droop is also determined by QCSE. As verified by the experimentally measured data and the ray-tracing simulation results, the suppressed efficiency droop for the InGaN-based LED having the nano-sized PCSS with a smaller space of 200 nm can be acquired due to the weaker function of the QCSE within the MQWs as a result of the smaller polarization fields coming from the lower compressive strain in the corresponding epitaxial layers.

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Texto completo: Disponível Coleções: Bases de dados internacionais Base de dados: MEDLINE Idioma: Inglês Revista: Opt Express Assunto da revista: Oftalmologia Ano de publicação: 2013 Tipo de documento: Artigo