Your browser doesn't support javascript.
Hubbard gap modulation in vanadium dioxide nanoscale tunnel junctions.
Nano Lett ; 14(11): 6115-20, 2014 Nov 12.
Artigo em Inglês | MEDLINE | ID: mdl-25268467
ABSTRACT
We locally investigate the electronic transport through individual tunnel junctions containing a 10 nm thin film of vanadium dioxide (VO2) across its thermally induced phase transition. The insulator-to-metal phase transition in the VO2 film collapses the Hubbard gap (experimentally determined to be 0.4 ± 0.07 V), leading to several orders of magnitude change in tunnel conductance. We quantitatively evaluate underlying transport mechanisms via theoretical quantum mechanical transport calculations which show excellent agreement with the experimental results.

Similares

MEDLINE

...
LILACS

LIS

Texto completo: Disponível Coleções: Bases de dados internacionais Base de dados: MEDLINE Idioma: Inglês Revista: Nano Lett Ano de publicação: 2014 Tipo de documento: Artigo País de afiliação: Estados Unidos