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High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors.
ACS Appl Mater Interfaces ; 7(1): 62-7, 2015 Jan 14.
Artigo em Inglês | MEDLINE | ID: mdl-25531887
We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.





Texto completo: Disponível Coleções: Bases de dados internacionais Base de dados: MEDLINE Idioma: Inglês Revista: ACS Appl Mater Interfaces Assunto da revista: Biotecnologia / Engenharia Biomédica Ano de publicação: 2015 Tipo de documento: Artigo País de afiliação: Alemanha