Your browser doesn't support javascript.
High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors.
ACS Appl Mater Interfaces ; 7(1): 62-7, 2015 Jan 14.
Artigo em Inglês | MEDLINE | ID: mdl-25531887
ABSTRACT
We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.

Similares

MEDLINE

...
LILACS

LIS

Texto completo: Disponível Coleções: Bases de dados internacionais Base de dados: MEDLINE Idioma: Inglês Revista: ACS Appl Mater Interfaces Assunto da revista: Biotecnologia / Engenharia Biomédica Ano de publicação: 2015 Tipo de documento: Artigo País de afiliação: Alemanha