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Enhanced power conversion efficiency in InGaN-based solar cells via graded composition multiple quantum wells.
Opt Express ; 23(24): A1434-41, 2015 Nov 30.
Artigo em Inglês | MEDLINE | ID: mdl-26698792
ABSTRACT
This work demonstrates the enhanced power conversion efficiency (PCE) in InGaN/GaN multiple quantum well (MQWs) solar cells with gradually decreasing indium composition in quantum wells (GQWs) toward p-GaN as absorber. The GQW can improve the fill factor from 42% to 62% and enhance the short current density from 0.8 mA/cm2 to 0.92 mA/cm2, as compares to the typical MQW solar cells. As a result, the PCE is boosted from 0.63% to 1.11% under AM1.5G illumination. Based on simulation and experimental results, the enhanced PCE can be attributed to the improved carrier collection in GQW caused by the reduction of potential barriers and piezoelectric polarization induced fields near the p-GaN layer. The presented concept paves a way toward highly efficient InGaN-based solar cells and other GaN-related MQW devices.

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Texto completo: Disponível Coleções: Bases de dados internacionais Base de dados: MEDLINE Idioma: Inglês Revista: Opt Express Assunto da revista: Oftalmologia Ano de publicação: 2015 Tipo de documento: Artigo