Nondestructive X-ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages.

Tanner, B K; Danilewsky, A N; Vijayaraghavan, R K; Cowley, A; McNally, P J

Tanner, B K; Danilewsky, A N; Vijayaraghavan, R K; Cowley, A; McNally, P J.

Afiliação

Tanner BK; Department of Physics, Durham University , South Road, Durham, County Durham DH1 3LE, UK.
Danilewsky AN; Kristallographie, Albert-Ludwigs-Universität , Freiburg, Germany.
Vijayaraghavan RK; School of Electronic Engineering, Dublin City University , Dublin 9, Ireland.
Cowley A; School of Electronic Engineering, Dublin City University , Dublin 9, Ireland.
McNally PJ; School of Electronic Engineering, Dublin City University , Dublin 9, Ireland.

J Appl Crystallogr ; 50(Pt 2): 547-554, 2017 Apr 01.

Article em En | MEDLINE | ID: mdl-28381979

Palavras-chave

X-ray diffraction imaging; encapsulated silicon dies; warpage

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: J Appl Crystallogr Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Reino Unido País de publicação: Estados Unidos

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