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Coherent Phonon Transport Measurement and Controlled Acoustic Excitations Using Tunable Acoustic Phonon Source in GHz-sub THz Range with Variable Bandwidth.
Shen, Xiaohan; Lu, Zonghuan; Timalsina, Yukta P; Lu, Toh-Ming; Washington, Morris; Yamaguchi, Masashi.
Afiliação
  • Shen X; Center for Materials, Devices, and Integrated Systems, and Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, 12180, United States.
  • Lu Z; Jiangsu Hengtong Optical Network Technology Co., Ltd., Suzhou, Jiangsu Province, 215200, China.
  • Timalsina YP; Center for Materials, Devices, and Integrated Systems, and Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, 12180, United States.
  • Lu TM; Center for Materials, Devices, and Integrated Systems, and Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, 12180, United States.
  • Washington M; Center for Materials, Devices, and Integrated Systems, and Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, 12180, United States.
  • Yamaguchi M; Center for Materials, Devices, and Integrated Systems, and Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, 12180, United States.
Sci Rep ; 8(1): 7054, 2018 May 04.
Artigo em Inglês | MEDLINE | ID: mdl-29728586
ABSTRACT
We experimentally demonstrated a narrowband acoustic phonon source with simultaneous tunabilities of the centre frequency and the spectral bandwidth in the GHz-sub THz frequency range based on photoacoustic excitation using intensity-modulated optical pulses. The centre frequency and bandwidth are tunable from 65 to 381 GHz and 17 to 73 GHz, respectively. The dispersion of the sound velocity and the attenuation of acoustic phonons in silicon dioxide (SiO2) and indium tin oxide (ITO) thin films were investigated using the acoustic phonon source. The sound velocities of SiO2 and ITO films were frequency-independent in the measured frequency range. On the other hand, the phonon attenuations of both of SiO2 and ITO films showed quadratic frequency dependences, and polycrystalline ITO showed several times larger attenuation than those in amorphous SiO2. In addition, the selective excitation of mechanical resonance modes was demonstrated in nanoscale tungsten (W) film using acoustic pulses with various centre frequencies and spectral widths.

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Texto completo: Disponível Coleções: Bases de dados internacionais Base de dados: MEDLINE Idioma: Inglês Revista: Sci Rep Ano de publicação: 2018 Tipo de documento: Artigo País de afiliação: Estados Unidos