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Investigation of Energy Band at Atomic-Layer-Deposited ZnO/ß-Ga2O3 ([Formula: see text]) Heterojunctions.
Nanoscale Res Lett ; 13(1): 412, 2018 Dec 24.
Artigo em Inglês | MEDLINE | ID: mdl-30584649
The energy band alignment of ZnO/ß-Ga2O3 ([Formula: see text]) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/ß-Ga2O3 heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased conduction band offset with temperature is mainly contributed by Zn interstitials in ZnO film. In the meanwhile, the acceptor-type complex defect Vzn + OH could account for the reduced valence band offset. These findings will facilitate the design and physical analysis of ZnO/ß-Ga2O3 relevant electronic devices.





Texto completo: Disponível Coleções: Bases de dados internacionais Base de dados: MEDLINE Idioma: Inglês Revista: Nanoscale Res Lett Ano de publicação: 2018 Tipo de documento: Artigo País de afiliação: China