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High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized ß-Ga2O3 layer.
Opt Lett ; 44(9): 2197-2200, 2019 May 01.
Artigo em Inglês | MEDLINE | ID: mdl-31042182
ABSTRACT
We report on the high-performance nanoporous (NP) GaN-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a thermal oxidized ß-Ga2O3insulating layer. The devices show a high responsivity of 4.5×105 A/W and maximum external quantum efficiency of 1.55×108% at 360 nm under a 10 V applied bias, which are attributed to the trap-assisted tunneling induced internal gain mechanism. Correspondingly, a specific detectivity of 8.27×1015 Jones and excellent optical switching repeatability are also observed in our fabricated PDs. The NP-GaN/ß-Ga2O3 MIS UV PD may act as an excellent candidate for the application in UV photodetection due to the high performance and simple fabrication process.

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Texto completo: Disponível Coleções: Bases de dados internacionais Base de dados: MEDLINE Idioma: Inglês Revista: Opt Lett Ano de publicação: 2019 Tipo de documento: Artigo