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Atomic Layer Deposition of Photoconductive Cu2O Thin Films.
Iivonen, Tomi; Heikkilä, Mikko J; Popov, Georgi; Nieminen, Heta-Elisa; Kaipio, Mikko; Kemell, Marianna; Mattinen, Miika; Meinander, Kristoffer; Mizohata, Kenichiro; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku.
Afiliação
  • Iivonen T; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland.
  • Heikkilä MJ; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland.
  • Popov G; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland.
  • Nieminen HE; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland.
  • Kaipio M; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland.
  • Kemell M; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland.
  • Mattinen M; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland.
  • Meinander K; Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki, Finland.
  • Mizohata K; Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki, Finland.
  • Räisänen J; Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki, Finland.
  • Ritala M; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland.
  • Leskelä M; Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland.
ACS Omega ; 4(6): 11205-11214, 2019 Jun 30.
Artigo em Inglês | MEDLINE | ID: mdl-31460221
ABSTRACT
Herein, we report an atomic layer deposition (ALD) process for Cu2O thin films using copper(II) acetate [Cu(OAc)2] and water vapor as precursors. This precursor combination enables the deposition of phase-pure, polycrystalline, and impurity-free Cu2O thin films at temperatures of 180-220 °C. The deposition of Cu(I) oxide films from a Cu(II) precursor without the use of a reducing agent is explained by the thermally induced reduction of Cu(OAc)2 to the volatile copper(I) acetate, CuOAc. In addition to the optimization of ALD process parameters and characterization of film properties, we studied the Cu2O films in the fabrication of photoconductor devices. Our proof-of-concept devices show that approximately 20 nm thick Cu2O films can be used for photodetection in the visible wavelength range and that the thin film photoconductors exhibit improved device characteristics in comparison to bulk Cu2O crystals.

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Texto completo: Disponível Coleções: Bases de dados internacionais Base de dados: MEDLINE Idioma: Inglês Revista: ACS Omega Ano de publicação: 2019 Tipo de documento: Artigo País de afiliação: Finlândia