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In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.
Ao, Meng Han; Zheng, Si Zheng; Zhong, Qi Lan; Zhang, Wen Di; Hou, Xu; Chai, Xiao Jie; Wang, Chao; Fan, Hao Chen; Lian, Jian Wei; Cheng, Yan; Wang, Jie; Jiang, Jun; Jiang, An Quan.
Afiliação
  • Ao MH; State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Zheng SZ; Department of Engineering Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310027, China.
  • Zhong QL; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China.
  • Zhang WD; State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Hou X; Department of Engineering Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310027, China.
  • Chai XJ; State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Wang C; State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Fan HC; State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Lian JW; State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Cheng Y; Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China.
  • Wang J; Department of Engineering Mechanics and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou 310027, China.
  • Jiang J; State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China.
  • Jiang AQ; State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China.
ACS Appl Mater Interfaces ; 13(28): 33291-33299, 2021 Jul 21.
Article em En | MEDLINE | ID: mdl-34242011

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos