Comparing data driven and physics inspired models for hopping transport in organic field effect transistors.

Lakshminarayanan, Madhavkrishnan; Dutta, Rajdeep; Repaka, D V Maheswar; Jayavelu, Senthilnath; Leong, Wei Lin; Hippalgaonkar, Kedar

Lakshminarayanan, Madhavkrishnan; Dutta, Rajdeep; Repaka, D V Maheswar; Jayavelu, Senthilnath; Leong, Wei Lin; Hippalgaonkar, Kedar.

Afiliação

Lakshminarayanan M; School of Electrical Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
Dutta R; Institute of Materials Research & Engineering, Agency for Science, Technology and Research (A*STAR), Singapore, 138632, Singapore.
Repaka DVM; Institute for Infocomm Research, Agency for Science, Technology and Research (A*STAR), Singapore, 138632, Singapore.
Jayavelu S; Institute of Materials Research & Engineering, Agency for Science, Technology and Research (A*STAR), Singapore, 138632, Singapore.
Leong WL; Institute for Infocomm Research, Agency for Science, Technology and Research (A*STAR), Singapore, 138632, Singapore. j_senthilnath@i2r.a-star.edu.sg.
Hippalgaonkar K; School of Electrical Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore. wlleong@ntu.edu.sg.

Sci Rep ; 11(1): 23621, 2021 Dec 08.

Article em En | MEDLINE | ID: mdl-34880283

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Singapura

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