Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS.

Pendurthi, Rahul; Jayachandran, Darsith; Kozhakhmetov, Azimkhan; Trainor, Nicholas; Robinson, Joshua A; Redwing, Joan M; Das, Saptarshi

Pendurthi, Rahul; Jayachandran, Darsith; Kozhakhmetov, Azimkhan; Trainor, Nicholas; Robinson, Joshua A; Redwing, Joan M; Das, Saptarshi.

Afiliação

Pendurthi R; Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA.
Jayachandran D; Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA.
Kozhakhmetov A; Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA.
Trainor N; Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA.
Robinson JA; 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials Research Institute, Penn State University, University Park, PA, 16802, USA.
Redwing JM; Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA.
Das S; 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials Research Institute, Penn State University, University Park, PA, 16802, USA.

Small ; 18(33): e2202590, 2022 Aug.

Article em En | MEDLINE | ID: mdl-35843869

Palavras-chave

complementary logic; field-effect transistors; heterogeneous integration; integrated circuits; two-dimensional materials

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Small Assunto da revista: ENGENHARIA BIOMEDICA Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Alemanha

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