Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer.

Hong, Kuo-Bin; Peng, Chun-Yen; Lin, Wei-Cheng; Chen, Kuan-Lun; Chen, Shih-Chen; Kuo, Hao-Chung; Chang, Edward Yi; Lin, Chun-Hsiung

Hong, Kuo-Bin; Peng, Chun-Yen; Lin, Wei-Cheng; Chen, Kuan-Lun; Chen, Shih-Chen; Kuo, Hao-Chung; Chang, Edward Yi; Lin, Chun-Hsiung.

Afiliação

Hong KB; Semiconductor Research Center, Hon Hai Research Institute, Taipei 114699, Taiwan.
Peng CY; Semiconductor Research Center, Hon Hai Research Institute, Taipei 114699, Taiwan.
Lin WC; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Chen KL; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Chen SC; Semiconductor Research Center, Hon Hai Research Institute, Taipei 114699, Taiwan.
Kuo HC; Semiconductor Research Center, Hon Hai Research Institute, Taipei 114699, Taiwan.
Chang EY; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Lin CH; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.

Micromachines (Basel) ; 14(3)2023 Feb 23.

Article em En | MEDLINE | ID: mdl-36984926

Palavras-chave

bonding; flip-chip device; high-electron mobility transistor; thermal analysis

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Taiwan País de publicação: Suíça

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