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Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current.
Lin, Chen; Zhang, Zijun; Dai, Zhenbang; Wu, Mengjiao; Liu, Shi; Chen, Jialu; Hua, Chenqiang; Lu, Yunhao; Zhang, Fei; Lou, Hongbo; Dong, Hongliang; Zeng, Qiaoshi; Ma, Jing; Pi, Xiaodong; Zhou, Dikui; Wu, Yongjun; Tian, He; Rappe, Andrew M; Ren, Zhaohui; Han, Gaorong.
Afiliação
  • Lin C; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Zhang Z; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Dai Z; Department of Chemistry, University of Pennsylvania, Philadelphia, PA, 19104-6323, USA.
  • Wu M; Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas, 78712, USA.
  • Liu S; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Chen J; Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China.
  • Hua C; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Lu Y; Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of physics, Zhejiang University, Hangzhou, 310027, China.
  • Zhang F; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Lou H; Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of physics, Zhejiang University, Hangzhou, 310027, China.
  • Dong H; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Zeng Q; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Ma J; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Pi X; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Zhou D; State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100091, China.
  • Wu Y; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Tian H; Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 311215, China.
  • Rappe AM; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Ren Z; Research Center for Intelligent Sensing, Zhejiang Lab, Hangzhou, 311100, China.
  • Han G; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
Nat Commun ; 14(1): 2341, 2023 Apr 24.
Article em En | MEDLINE | ID: mdl-37095113
ABSTRACT
Solution growth of single-crystal ferroelectric oxide films has long been pursued for the low-cost development of high-performance electronic and optoelectronic devices. However, the established principles of vapor-phase epitaxy cannot be directly applied to solution epitaxy, as the interactions between the substrates and the grown materials in solution are quite different. Here, we report the successful epitaxy of single-domain ferroelectric oxide films on Nb-doped SrTiO3 single-crystal substrates by solution reaction at a low temperature of ~200 oC. The epitaxy is mainly driven by an electronic polarization screening effect at the interface between the substrates and the as-grown ferroelectric oxide films, which is realized by the electrons from the doped substrates. Atomic-level characterization reveals a nontrivial polarization gradient throughout the films in a long range up to ~500 nm because of a possible structural transition from the monoclinic phase to the tetragonal phase. This polarization gradient generates an extremely high photovoltaic short-circuit current density of ~2.153 mA/cm2 and open-circuit voltage of ~1.15 V under 375 nm light illumination with power intensity of 500 mW/cm2, corresponding to the highest photoresponsivity of ~4.306×10-3 A/W among all known ferroelectrics. Our results establish a general low-temperature solution route to produce single-crystal gradient films of ferroelectric oxides and thus open the avenue for their broad applications in self-powered photo-detectors, photovoltaic and optoelectronic devices.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China País de publicação: ENGLAND / ESCOCIA / GB / GREAT BRITAIN / INGLATERRA / REINO UNIDO / SCOTLAND / UK / UNITED KINGDOM

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China País de publicação: ENGLAND / ESCOCIA / GB / GREAT BRITAIN / INGLATERRA / REINO UNIDO / SCOTLAND / UK / UNITED KINGDOM