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Lattice plainification advances highly effective SnSe crystalline thermoelectrics.
Liu, Dongrui; Wang, Dongyang; Hong, Tao; Wang, Ziyuan; Wang, Yuping; Qin, Yongxin; Su, Lizhong; Yang, Tianyu; Gao, Xiang; Ge, Zhenhua; Qin, Bingchao; Zhao, Li-Dong.
Afiliação
  • Liu D; School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
  • Wang D; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450052, China.
  • Hong T; School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
  • Wang Z; Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China.
  • Wang Y; School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
  • Qin Y; School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
  • Su L; School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
  • Yang T; Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China.
  • Gao X; Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100094, China.
  • Ge Z; Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China.
  • Qin B; School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
  • Zhao LD; School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
Science ; 380(6647): 841-846, 2023 May 26.
Article em En | MEDLINE | ID: mdl-37228203
ABSTRACT
Thermoelectric technology has been widely used for key areas, including waste-heat recovery and solid-state cooling. We discovered tin selenide (SnSe) crystals with potential power generation and Peltier cooling performance. The extensive off-stoichiometric defects have a larger impact on the transport properties of SnSe, which motivated us to develop a lattice plainification strategy for defects engineering. We demonstrated that Cu can fill Sn vacancies to weaken defects scattering and boost carrier mobility, facilitating a power factor exceeding ~100 microwatts per centimeter per square kelvin and a dimensionless figure of merit (ZT) of ~1.5 at 300 kelvin, with an average ZT of ~2.2 at 300 to 773 kelvin. We further realized a single-leg efficiency of ~12.2% under a temperature difference (ΔT) of ~300 kelvin and a seven-pair Peltier cooling ΔTmax of ~61.2 kelvin at ambient temperature. Our observations are important for practical applications of SnSe crystals in power generation as well as electronic cooling.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Science Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China País de publicação: EEUU / ESTADOS UNIDOS / ESTADOS UNIDOS DA AMERICA / EUA / UNITED STATES / UNITED STATES OF AMERICA / US / USA

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Science Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China País de publicação: EEUU / ESTADOS UNIDOS / ESTADOS UNIDOS DA AMERICA / EUA / UNITED STATES / UNITED STATES OF AMERICA / US / USA