The influence of paper coating content on room temperature sintering of silver nanoparticle ink.

The resistance of inkjet printed lines using a silver nanoparticle based ink can be very dependent on the substrate. A very large difference in resistivity was observed for tracks printed on paper substrates with aluminum oxide based coatings compared to silica based coatings. Silica based coatings are often cationized with polymers using chloride as a counter ion. It is suggested that the precipitation of silver salts is the cause of the high resistivity, since papers pretreated with salt solutions containing ions that precipitate silver salts gave a high resistance. Silver nitrate has a high solubility and paper pretreated with nitrate ions gave a low resistivity without sintering. The results obtained show that, by choosing the correct type of paper substrate, it is possible to manufacture printed structures, such as interconnects on paper, without the need for, or at least to reduce the need for, post-print sintering. This phenomenon is, of course, ink specific. Inks without or with a low silver ion content are not expected to behave in this manner. In some sensor applications, a high resistivity is desired and, by using the correct combination of ink and paper, these types of sensors can be facilitated.

Inkjet-printed stretchable and low voltage synaptic transistor array.

Wearable and skin electronics benefit from mechanically soft and stretchable materials to conform to curved and dynamic surfaces, thereby enabling seamless integration with the human body. However, such materials are challenging to process using traditional microelectronics techniques. Here, stretchable transistor arrays are patterned exclusively from solution by inkjet printing of polymers and carbon nanotubes. The additive, non-contact and maskless nature of inkjet printing provides a simple, inexpensive and scalable route for stacking and patterning these chemically-sensitive materials over large areas. The transistors, which are stable at ambient conditions, display mobilities as high as 30 cm2 V-1 s-1 and currents per channel width of 0.2 mA cm-1 at operation voltages as low as 1 V, owing to the ionic character of their printed gate dielectric. Furthermore, these transistors with double-layer capacitive dielectric can mimic the synaptic behavior of neurons, making them interesting for conformal brain-machine interfaces and other wearable bioelectronics.