Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene.

Mesoscopic conductance fluctuations are a ubiquitous signature of phase-coherent transport in small conductors, exhibiting universal character independent of system details. In this Letter, however, we demonstrate a pronounced breakdown of this universality, due to the interplay of local and remote phenomena in transport. Our experiments are performed in a graphene-based interaction-detection geometry, in which an artificial magnetic texture is induced in the graphene layer by covering a portion of it with a micromagnet. When probing conduction at some distance from this region, the strong influence of remote factors is manifested through the appearance of giant conductance fluctuations, with amplitude much larger than e^{2}/h. This violation of one of the fundamental tenets of mesoscopic physics dramatically demonstrates how local considerations can be overwhelmed by remote signatures in phase-coherent conductors.

Giant Zero Bias Anomaly due to Coherent Scattering from Frozen Phonon Disorder in Quantum Point Contacts.

We demonstrate an unusual manifestation of coherent scattering for electron waves in mesoscopic quantum point contacts, in which fast electron dynamics allows the phonon system to serve as a quasistatic source of disorder. The low-temperature conductance of these devices exhibits a giant (≫2e^{2}/h) zero bias anomaly (ZBA), the features of which are reproduced in a nonequilibrium model for coherent scattering from the "frozen" phonon disorder. According to this model, the ZBA is understood to result from the in situ electrical manipulation of the phonon disorder, a mechanism that could open up a pathway to the on-demand control of coherent scattering in the solid state.

"Freeing" Graphene from Its Substrate: Observing Intrinsic Velocity Saturation with Rapid Electrical Pulsing.

Rapid (nanosecond-scale) electrical pulsing is used to study drift-velocity saturation in graphene field-effect devices. In these experiments, high-field pulses are utilized to drive graphene's carriers on time scales much faster than that on which energy loss to the underlying substrate can occur, thereby allowing the observation of the highest saturation velocities reported to date. In a dramatic departure from the behavior exhibited by conventional metals and semiconductors, as the electron or hole density is reduced toward the charge-neutrality point, the drift velocity is found to reach values comparable to the Fermi velocity itself. Corresponding current densities are as large as 10(9) A/cm(2), similar to the values reported for carbon nanotubes and for graphene-on-diamond transistors. In essence, our approach of rapid pulsing allows us to "free" graphene from the deleterious influence of its substrate, revealing a pathway to achieve the superior electrical performance promised by this material. The usefulness of this approach is not merely limited to graphene but should extend also to a broad variety of two-dimensional semiconductors.

Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors.

We demonstrate a novel form of thermally-assisted hysteresis in the transfer curves of monolayer MoS2 FETs, characterized by the appearance of a large gate-voltage window and distinct current levels that differ by a factor of ∼102. The hysteresis emerges for temperatures in excess of 400 K and, from studies in which the gate-voltage sweep parameters are varied, appears to be related to charge injection into the SiO2 gate dielectric. The thermally-assisted memory is strongly suppressed in equivalent measurements performed on bilayer transistors, suggesting that weak screening in the monolayer system plays a vital role in generating its strongly sensitive response to the charge-injection process. By exploiting the full features of the hysteretic transfer curves, programmable memory operation is demonstrated. The essential principles demonstrated here point the way to a new class of thermally assisted memories based on atomically thin two-dimensional semiconductors.

Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation.

We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.

A review of progress in the physics of open quantum systems: theory and experiment.

This report on progress explores recent advances in our theoretical and experimental understanding of the physics of open quantum systems (OQSs). The study of such systems represents a core problem in modern physics that has evolved to assume an unprecedented interdisciplinary character. OQSs consist of some localized, microscopic, region that is coupled to an external environment by means of an appropriate interaction. Examples of such systems may be found in numerous areas of physics, including atomic and nuclear physics, photonics, biophysics, and mesoscopic physics. It is the latter area that provides the main focus of this review, an emphasis that is driven by the capacity that exists to subject mesoscopic devices to unprecedented control. We thus provide a detailed discussion of the behavior of mesoscopic devices (and other OQSs) in terms of the projection-operator formalism, according to which the system under study is considered to be comprised of a localized region (Q), embedded into a well-defined environment (P) of scattering wavefunctions (with Q + P = 1). The Q subspace must be treated using the concepts of non-Hermitian physics, and of particular interest here is: the capacity of the environment to mediate a coupling between the different states of Q; the role played by the presence of exceptional points (EPs) in the spectra of OQSs; the influence of EPs on the rigidity of the wavefunction phases, and; the ability of EPs to initiate a dynamical phase transition (DPT). EPs are singular points in the continuum, at which two resonance states coalesce, that is where they exhibit a non-avoided crossing. DPTs occur when the quantum dynamics of the open system causes transitions between non-analytically connected states, as a function of some external control parameter. Much like conventional phase transitions, the behavior of the system on one side of the DPT does not serve as a reliable indicator of that on the other. In addition to discussing experiments on mesoscopic quantum point contacts that provide evidence of the environmentally-mediated coupling of quantum states, we also review manifestations of DPTs in mesoscopic devices and other systems. These experiments include observations of resonance-trapping behavior in microwave cavities and open quantum dots, phase lapses in tunneling through single-electron transistors, and spin swapping in atomic ensembles. Other possible manifestations of this phenomenon are presented, including various superradiant phenomena in low-dimensional semiconductors. From these discussions a generic picture of OQSs emerges in which the environmentally-mediated coupling between different quantum states plays a critical role in governing the system behavior. The ability to control or manipulate this interaction may even lead to new applications in photonics and electronics.

Tuning the Fano resonance with an intruder continuum.

Through a combination of experiment and theory we establish the possibility of achieving strong tuning of Fano resonances (FRs), by allowing their usual two-path geometry to interfere with an additional, "intruder", continuum. As the coupling strength to this intruder is varied, we predict strong modulations of the resonance line shape that, in principle at least, may exceed the amplitude of the original FR itself. For a proof-of-concept demonstration of this phenomenon, we construct a nanoscale interferometer from nonlocally coupled quantum point contacts and utilize the unique features of their density of states to realize the intruder. External control of the intruder coupling is enabled by means of an applied magnetic field, in the presence of which we demonstrate the predicted distortions of the FR. This general scheme for resonant control should be broadly applicable to a variety of wave-based systems, opening up the possibility of new applications in areas such as chemical and biological sensing and secure communications.

Large magnetoresistance of nickel-silicide nanowires: non-equilibrium heating of magnetically-coupled dangling bonds.

We demonstrate large (>100%) time-dependent magnetoresistance in nickel-silicide nanowires and develop a thermodynamic model for this behavior. The model describes nonequilibrium heating of localized spins in an increasing magnetic field. We find a strong interaction between spins but no long-range magnetic order. The spins likely come from unpaired dangling bonds in the interfacial layers of the nanowires. The model indicates that although these bonds couple weakly to a thermal bath, they dominate the nanowire resistance.

Fast energy relaxation of hot carriers near the Dirac point of graphene.

We investigate energy relaxation of hot carriers in monolayer and bilayer graphene devices, demonstrating that the relaxation rate increases significantly as the Dirac point is approached from either the conduction or valence band. This counterintuitive behavior appears consistent with ideas of charge puddling under disorder, suggesting that it becomes very difficult to excite carriers out of these localized regions. These results therefore demonstrate how the peculiar properties of graphene extend also to the behavior of its nonequilibrium carriers.

Terahertz-frequency plasmonic-crystal instability in field-effect transistors with asymmetric gate arrays.

We present a theory for plasmonic crystal instability in a semiconductor field-effect transistor with a dual grating gate array, designed with strong asymmetry in the elementary cell of this "crystal". We demonstrate that, under the action of a dc current bias, the Bloch plasma waves in the plasmonic crystal formed in this transistor develop the Dyakonov-Shur instability. By calculating the energy spectrum and instability increments/decrements-which govern the growth/decay of excitations within the plasmonic crystal-we analyze the dependence of the latter on the electron drift velocity and the extent of the structural asymmetry. In contrast with the corresponding problem for gate arrays with symmetric unit cells, the presence of finite plasma instability increments across the entire Brillouin zone is established. This important difference points to the possibility of exciting sustained, radiating, non-linear electron plasma oscillations in the instability endpoint of the asymmetric array. These structures should be readily implementable in common semiconductor heterostructures, using standard nanofabrication techniques, enabling operation at room temperature. Long-range coherence of the unstable plasma oscillations, generated in the elementary cells of the crystal, should dramatically increase the radiated THz electromagnetic power, making this approach a promising pathway to the generation of THz signals.

Crossover from Fermi liquid to multichannel Luttinger liquid in high-mobility quantum wires.

We investigate the electrical conductance of long, high-mobility quantum wires formed by the split-gate technique, which allows for adjustment of the wire width and the number of one-dimensional electron subbands, n. In wires with 3

Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence.

The differential conductance of graphene is shown to exhibit a zero-bias anomaly at low temperatures, arising from a suppression of the quantum corrections due to weak localization and electron interactions. A simple rescaling of these data, free of any adjustable parameters, shows that this anomaly exhibits a universal, temperature- (T) independent form. According to this, the differential conductance is approximately constant at small voltages (V < kBT/e), while at larger voltages it increases logarithmically with the applied bias. For theoretical insight into the origins of this behaviour, which is inconsistent with electron heating, we formulate a model for weak-localization in the presence of nonequilibrium transport. According to this model, the applied voltage causes unavoidable dispersion decoherence, which arises as diffusing electron partial waves, with a spread of energies defined by the value of the applied voltage, gradually decohere with one another as they diffuse through the system. The decoherence yields a universal scaling of the conductance as a function of eV/kBT, with a logarithmic variation for eV/kBT > 1, variations in accordance with the results of experiment. Our theoretical description of nonequilibrium transport in the presence of this source of decoherence exhibits strong similarities with the results of experiment, including the aforementioned rescaling of the conductance and its logarithmic variation as a function of the applied voltage.

Dynamical characteristics of the giant magneto-resistance of epitaxial silicide nanowires.

We study the dynamical properties of a hugely hysteretic magneto-resistance in epitaxially formed silicide nanowires, and propose a model for this remarkable effect in which it is attributed to the collective interactions among interfacial spins associated with dangling bonds. According to our model, the dynamic character of this effect reflects a competitive tendency for the interfacial spins to align in different collective configurations (random, ordered, and multi-domain). Our work thus provides a dramatic demonstration of how the collective interactions among interfacial spins can modify the properties of nonmagnetic nanostructures.

Evaluating the Sources of Graphene's Resistivity Using Differential Conductance.

We explore the contributions to the electrical resistance of monolayer and bilayer graphene, revealing transitions between different regimes of charge carrier scattering. In monolayer graphene at low densities, a nonmonotonic variation of the resistance is observed as a function of temperature. Such behaviour is consistent with the influence of scattering from screened Coulomb impurities. At higher densities, the resistance instead varies in a manner consistent with the influence of scattering from acoustic and optical phonons. The crossover from phonon-, to charged-impurity, limited conduction occurs once the concentration of gate-induced carriers is reduced below that of the residual carriers. In bilayer graphene, the resistance exhibits a monotonic decrease with increasing temperature for all densities, with the importance of short-range impurity scattering resulting in a "universal" density-independent (scaled) conductivity at high densities. At lower densities, the conductivity deviates from this universal curve, pointing to the importance of thermal activation of carriers out of charge puddles. These various assignments, in both systems, are made possible by an approach of "differential-conductance mapping", which allows us to suppress quantum corrections to reveal the underlying mechanisms governing the resistivity.

Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs.

The high field phenomena of inter-valley transfer and avalanching breakdown have long been exploited in devices based on conventional semiconductors. In this Article, we demonstrate the manifestation of these effects in atomically-thin WS2 field-effect transistors. The negative differential conductance exhibits all of the features familiar from discussions of this phenomenon in bulk semiconductors, including hysteresis in the transistor characteristics and increased noise that is indicative of travelling high-field domains. It is also found to be sensitive to thermal annealing, a result that we attribute to the influence of strain on the energy separation of the different valleys involved in hot-electron transfer. This idea is supported by the results of ensemble Monte Carlo simulations, which highlight the sensitivity of the negative differential conductance to the equilibrium populations of the different valleys. At high drain currents (>10 µA/µm) avalanching breakdown is also observed, and is attributed to trap-assisted inverse Auger scattering. This mechanism is not normally relevant in conventional semiconductors, but is possible in WS2 due to the narrow width of its energy bands. The various results presented here suggest that WS2 exhibits strong potential for use in hot-electron devices, including compact high-frequency sources and photonic detectors.

Metal-insulator transition in the quasi-one-dimensional transport of fractional quantum Hall states.

We investigate edge state transmission in quantum point contacts (QPCs) in the fractional quantum-Hall regime, finding behavior reminiscent of a metal-insulator transition. The transition is suggested by an unusual behavior of the differential conductance in the fractional-quantum-Hall regime, and by the presence of a fixed point and universal scaling in the temperature dependence of the linear conductance. Noting that the 0.7 feature evolves continuously into a last fractional plateau at high magnetic fields, we suggest that this still unresolved feature may itself be viewed as a manifestation of a local, microscopic, metal-insulator transition.

Signatures of dynamical tunneling in semiclassical quantum dots.

We study transport in large, and strongly open, quantum dots, which might typically be viewed as lying well within the semiclassical regime. The low-temperature magnetoresistance of these structures exhibits regular fluctuations, with just a small number of dominant frequency components, indicative of the presence of dynamical tunneling into regular orbits. Support for these ideas is provided by the results of numerical simulations, which reveal wave function scarring by classically inaccessible orbits, which is found to persist even in the presence of a moderately disordered dot potential. Our results suggest that dynamical tunneling may play a more generic role in transport through mesoscopic structures than has thus far been appreciated.

Formation of a protected sub-band for conduction in quantum point contacts under extreme biasing.

Managing energy dissipation is critical to the scaling of current microelectronics and to the development of novel devices that use quantum coherence to achieve enhanced functionality. To this end, strategies are needed to tailor the electron-phonon interaction, which is the dominant mechanism for cooling non-equilibrium ('hot') carriers. In experiments aimed at controlling the quantum state, this interaction causes decoherence that fundamentally disrupts device operation. Here, we show a contrasting behaviour, in which strong electron-phonon scattering can instead be used to generate a robust mode for electrical conduction in GaAs quantum point contacts, driven into extreme non-equilibrium by nanosecond voltage pulses. When the amplitude of these pulses is much larger than all other relevant energy scales, strong electron-phonon scattering induces an attraction between electrons in the quantum-point-contact channel, which leads to the spontaneous formation of a narrow current filament and to a renormalization of the electronic states responsible for transport. The lowest of these states coalesce to form a sub-band separated from all others by an energy gap larger than the source voltage. Evidence for this renormalization is provided by a suppression of heating-related signatures in the transient conductance, which becomes pinned near 2e(2)/h (e, electron charge; h, Planck constant) for a broad range of source and gate voltages. This collective non-equilibrium mode is observed over a wide range of temperature (4.2-300 K) and may provide an effective means to manage electron-phonon scattering in nanoscale devices.

On the zero-bias anomaly and Kondo physics in quantum point contacts near pinch-off.

We investigate the linear and non-linear conductance of quantum point contacts (QPCs), in the region near pinch-off where Kondo physics has previously been connected to the appearance of the 0.7 feature. In studies of seven different QPCs, fabricated in the same high-mobility GaAs/AlGaAs heterojunction, the linear conductance is widely found to show the presence of the 0.7 feature. The differential conductance, on the other hand, does not generally exhibit the zero-bias anomaly (ZBA) that has been proposed to indicate the Kondo effect. Indeed, even in the small subset of QPCs found to exhibit such an anomaly, the linear conductance does not always follow the universal temperature-dependent scaling behavior expected for the Kondo effect. Taken collectively, our observations demonstrate that, unlike the 0.7 feature, the ZBA is not a generic feature of low-temperature QPC conduction. We furthermore conclude that the mere observation of the ZBA alone is insufficient evidence for concluding that Kondo physics is active. While we do not rule out the possibility that the Kondo effect may occur in QPCs, our results appear to indicate that its observation requires a very strict set of conditions to be satisfied. This should be contrasted with the case of the 0.7 feature, which has been apparent since the earliest experimental investigations of QPC transport.